Simulation of Thermal Barrier Layer Effects on Cu/PI Structures for Flexible Film Antenna Fabrication

Guanghui Dong; Shufeng Sun; Dunzhu GeSang; Jin Wang; Fengyun Zhang; Tao Wei

doi:10.63313/AERpc.9053

Authors

Guanghui Dong Discipline Innovation and Wisdom Introduction Base of High-end Laser Intelligent Manufacturing Technology and Equipment, Qing-dao University of Technology, Qingdao 266525, China Author
Shufeng Sun Discipline Innovation and Wisdom Introduction Base of High-end Laser Intelligent Manufacturing Technology and Equipment, Qing-dao University of Technology, Qingdao 266525, China Author
Dunzhu GeSang Science and Technology in Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, China Author
Jin Wang Discipline Innovation and Wisdom Introduction Base of High-end Laser Intelligent Manufacturing Technology and Equipment, Qing-dao University of Technology, Qingdao 266525, China Author
Fengyun Zhang Discipline Innovation and Wisdom Introduction Base of High-end Laser Intelligent Manufacturing Technology and Equipment, Qing-dao University of Technology, Qingdao 266525, China Author
Tao Wei Discipline Innovation and Wisdom Introduction Base of High-end Laser Intelligent Manufacturing Technology and Equipment, Qing-dao University of Technology, Qingdao 266525, China Author

DOI:

https://doi.org/10.63313/AERpc.9053

Keywords:

Laser Ablation, Thermal Barrier Layer, Finite Element Simulation, Cu/Ti/PI Structure, Nanosecond Laser

Abstract

This study investigates the influence of a thermal barrier layer on the laser ablation behavior of a Cu/Ti/PI trilayer structure using finite element simulation in COMSOL Multiphysics. A 2D model was established to analyze the temperature distribution and material removal under nanosecond pulsed laser irradiation. The effects of single-pulse energy, thermal barrier layer thickness, pulse width, and scanning speed were systematically evaluated. Results indicate that a Ti thermal barrier layer with a thickness of 200–300 nm effectively delays the vaporization of the PI substrate while maintaining adequate copper removal. Optimal processing parameters were identified as a single-pulse energy of 450 μJ, pulse width of 120 ns, and scanning speed of 250 mm/s, which achieved complete copper ablation with minimal substrate damage.

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