Research on the Influence of Magnetron Sputtering parameters on the Structure and Properties of ITO Thin Films

Dongfeng Ma; PengCheng Zhang; Dunzhu GeSang

doi:10.63313/AERpc.9073

Authors

Dongfeng Ma Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou, China Author
PengCheng Zhang School of Mechanical and Electrical Engineering, Lanzhou University of Technology, Lanzhou, China Author
Dunzhu GeSang Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou, China Author

DOI:

https://doi.org/10.63313/AERpc.9073

Keywords:

ITO thin films, Magnetron sputtering, Structure, Properties

Abstract

This study systematically investigates the influence of key magnetron sputtering parameters—working pressure, sputtering power, and nitrogen doping—on the growth, microstructure, and functional properties of indium tin oxide (ITO) thin films. Through a designed experimental matrix, the deposition kinetics, crystallographic structure, chemical bonding states, and electrical resistivity were characterized to establish clear process-structure-property relationships. The results reveal that increasing the working pressure enhances oxygen vacancy concentration, which dominates the reduction in electrical resistivity despite a degradation in crystallinity. Higher sputtering power improves film crystallinity and dopant activation, synergistically optimizing carrier mobility and concentration. Nitrogen incorporation introduces complex doping effects, initially passivating oxygen vacancies to lower resistivity at low partial pressure but forming carrier-trapping nitride phases at higher levels, leading to increased resistivity and amorphization. This work provides a mechanistic understanding of parameter-controlled defect engineering and microstructure evolution in ITO films, offering practical guidance for tailoring their optoelectronic performance for advanced transparent electrode applications.

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